Anomalous thermal redistribution of beryllium implanted in InGaAs: a possible interaction with extended defects
Identifieur interne : 00F901 ( Main/Repository ); précédent : 00F900; suivant : 00F902Anomalous thermal redistribution of beryllium implanted in InGaAs: a possible interaction with extended defects
Auteurs : RBID : Pascal:02-0559331Descripteurs français
- Pascal (Inist)
- Etude expérimentale, Semiconducteur III-V, Indium arséniure, Gallium arséniure, Couche mince, Couche épitaxique, Implantation ion, Phosphore ion, Dopage cristal, Addition béryllium, Recuit thermique rapide, Profil dopage, SIMS, Diffusion(transport), Hétérodiffusion, Interaction défaut cristallin, Simulation ordinateur, 6855L, InGaAs:Be P, As Ga In.
English descriptors
- KwdEn :
- Beryllium additions, Computerized simulation, Crystal defect interaction, Crystal doping, Diffusion, Doping profiles, Epitaxial layers, Experimental study, Gallium arsenides, III-V semiconductors, Impurity diffusion, Indium arsenides, Ion implantation, Phosphorus ions, Rapid thermal annealing, SIMS, Thin films.
Abstract
Phosphorus and beryllium have been coimplanted in InGaAs. Various anneals have been performed in the temperature range of 745-826°C. The secondary ion mass spectrometry measurements have revealed anomalous redistribution of the beryllium dopant: "up-hill" Be diffusion profiles have been observed. The observations of as-implanted profiles suggest that these anomalous beryllium peaks are due to beryllium trapping by the extended defects generated by the P implantation. A good agreement has been obtained between the experimental data and simulated profiles.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Anomalous thermal redistribution of beryllium implanted in InGaAs: a possible interaction with extended defects</title><author><name sortKey="Ihaddadene, M" uniqKey="Ihaddadene M">M. Ihaddadene</name><affiliation wicri:level="4"><inist:fA14 i1="01"><s1>Laboratoire Electronique Microtechnologie et Instrumentation, LEMI, UPRES EA 2654, TUT-Université de Rouen</s1><s2>76821 Mont Saint Aignan</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Haute-Normandie</region><settlement type="city">Mont Saint Aignan</settlement></placeName><orgName type="university">Université de Rouen</orgName></affiliation></author><author><name sortKey="Marcon, J" uniqKey="Marcon J">J. Marcon</name><affiliation wicri:level="4"><inist:fA14 i1="01"><s1>Laboratoire Electronique Microtechnologie et Instrumentation, LEMI, UPRES EA 2654, TUT-Université de Rouen</s1><s2>76821 Mont Saint Aignan</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Haute-Normandie</region><settlement type="city">Mont Saint Aignan</settlement></placeName><orgName type="university">Université de Rouen</orgName></affiliation></author><author><name sortKey="Idrissi Benzohra, M" uniqKey="Idrissi Benzohra M">M. Idrissi-Benzohra</name><affiliation wicri:level="4"><inist:fA14 i1="01"><s1>Laboratoire Electronique Microtechnologie et Instrumentation, LEMI, UPRES EA 2654, TUT-Université de Rouen</s1><s2>76821 Mont Saint Aignan</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Haute-Normandie</region><settlement type="city">Mont Saint Aignan</settlement></placeName><orgName type="university">Université de Rouen</orgName></affiliation></author><author><name sortKey="Ketata, K" uniqKey="Ketata K">K. Ketata</name><affiliation wicri:level="4"><inist:fA14 i1="01"><s1>Laboratoire Electronique Microtechnologie et Instrumentation, LEMI, UPRES EA 2654, TUT-Université de Rouen</s1><s2>76821 Mont Saint Aignan</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Haute-Normandie</region><settlement type="city">Mont Saint Aignan</settlement></placeName><orgName type="university">Université de Rouen</orgName></affiliation></author><author><name sortKey="Demichel, S" uniqKey="Demichel S">S. Demichel</name><affiliation wicri:level="3"><inist:fA14 i1="02"><s1>LPN-CNRS, 196 Av. H. Ravéra</s1><s2>92222 Bagneux</s2><s3>FRA</s3><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Île-de-France</region><settlement type="city">Bagneux</settlement></placeName></affiliation></author><author><name sortKey="Flicstein, J" uniqKey="Flicstein J">J. Flicstein</name><affiliation wicri:level="3"><inist:fA14 i1="02"><s1>LPN-CNRS, 196 Av. H. Ravéra</s1><s2>92222 Bagneux</s2><s3>FRA</s3><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Île-de-France</region><settlement type="city">Bagneux</settlement></placeName></affiliation><affiliation wicri:level="3"><inist:fA14 i1="03"><s1>France Télécom, R&D/DTD, Laboratoire de CDP, CNRS URA 250, 196, Av. H. Ravéra, BP 107</s1><s2>92225 Bagneux</s2><s3>FRA</s3><sZ>6 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Île-de-France</region><settlement type="city">Bagneux</settlement></placeName></affiliation></author><author><name sortKey="Pelouard, J L" uniqKey="Pelouard J">J. L. Pelouard</name><affiliation wicri:level="3"><inist:fA14 i1="02"><s1>LPN-CNRS, 196 Av. H. Ravéra</s1><s2>92222 Bagneux</s2><s3>FRA</s3><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Île-de-France</region><settlement type="city">Bagneux</settlement></placeName></affiliation></author><author><name sortKey="Ketata, M" uniqKey="Ketata M">M. Ketata</name><affiliation wicri:level="4"><inist:fA14 i1="01"><s1>Laboratoire Electronique Microtechnologie et Instrumentation, LEMI, UPRES EA 2654, TUT-Université de Rouen</s1><s2>76821 Mont Saint Aignan</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Haute-Normandie</region><settlement type="city">Mont Saint Aignan</settlement></placeName><orgName type="university">Université de Rouen</orgName></affiliation></author></titleStmt><publicationStmt><idno type="inist">02-0559331</idno><date when="2002">2002</date><idno type="stanalyst">PASCAL 02-0559331 INIST</idno><idno type="RBID">Pascal:02-0559331</idno><idno type="wicri:Area/Main/Corpus">00E399</idno><idno type="wicri:Area/Main/Repository">00F901</idno></publicationStmt><seriesStmt><idno type="ISSN">0927-0256</idno><title level="j" type="abbreviated">Comput. mater. sci.</title><title level="j" type="main">Computational materials science</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Beryllium additions</term><term>Computerized simulation</term><term>Crystal defect interaction</term><term>Crystal doping</term><term>Diffusion</term><term>Doping profiles</term><term>Epitaxial layers</term><term>Experimental study</term><term>Gallium arsenides</term><term>III-V semiconductors</term><term>Impurity diffusion</term><term>Indium arsenides</term><term>Ion implantation</term><term>Phosphorus ions</term><term>Rapid thermal annealing</term><term>SIMS</term><term>Thin films</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Etude expérimentale</term><term>Semiconducteur III-V</term><term>Indium arséniure</term><term>Gallium arséniure</term><term>Couche mince</term><term>Couche épitaxique</term><term>Implantation ion</term><term>Phosphore ion</term><term>Dopage cristal</term><term>Addition béryllium</term><term>Recuit thermique rapide</term><term>Profil dopage</term><term>SIMS</term><term>Diffusion(transport)</term><term>Hétérodiffusion</term><term>Interaction défaut cristallin</term><term>Simulation ordinateur</term><term>6855L</term><term>InGaAs:Be P</term><term>As Ga In</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Phosphorus and beryllium have been coimplanted in InGaAs. Various anneals have been performed in the temperature range of 745-826°C. The secondary ion mass spectrometry measurements have revealed anomalous redistribution of the beryllium dopant: "up-hill" Be diffusion profiles have been observed. The observations of as-implanted profiles suggest that these anomalous beryllium peaks are due to beryllium trapping by the extended defects generated by the P implantation. A good agreement has been obtained between the experimental data and simulated profiles.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0927-0256</s0></fA01><fA03 i2="1"><s0>Comput. mater. sci.</s0></fA03><fA05><s2>24</s2></fA05><fA06><s2>1-2</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Anomalous thermal redistribution of beryllium implanted in InGaAs: a possible interaction with extended defects</s1></fA08><fA09 i1="01" i2="1" l="ENG"><s1>Computational Materials Science Across Time and Length Scales: Proceedings of the E-MRS 2001 Spring Meeting - Symposium A</s1></fA09><fA11 i1="01" i2="1"><s1>IHADDADENE (M.)</s1></fA11><fA11 i1="02" i2="1"><s1>MARCON (J.)</s1></fA11><fA11 i1="03" i2="1"><s1>IDRISSI-BENZOHRA (M.)</s1></fA11><fA11 i1="04" i2="1"><s1>KETATA (K.)</s1></fA11><fA11 i1="05" i2="1"><s1>DEMICHEL (S.)</s1></fA11><fA11 i1="06" i2="1"><s1>FLICSTEIN (J.)</s1></fA11><fA11 i1="07" i2="1"><s1>PELOUARD (J. L.)</s1></fA11><fA11 i1="08" i2="1"><s1>KETATA (M.)</s1></fA11><fA12 i1="01" i2="1"><s1>WILLE (L. T.)</s1><s9>ed.</s9></fA12><fA12 i1="02" i2="1"><s1>DREYSSE (H.)</s1><s9>ed.</s9></fA12><fA12 i1="03" i2="1"><s1>NIEMINEN (R. M.)</s1><s9>ed.</s9></fA12><fA14 i1="01"><s1>Laboratoire Electronique Microtechnologie et Instrumentation, LEMI, UPRES EA 2654, TUT-Université de Rouen</s1><s2>76821 Mont Saint Aignan</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>8 aut.</sZ></fA14><fA14 i1="02"><s1>LPN-CNRS, 196 Av. H. Ravéra</s1><s2>92222 Bagneux</s2><s3>FRA</s3><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></fA14><fA14 i1="03"><s1>France Télécom, R&D/DTD, Laboratoire de CDP, CNRS URA 250, 196, Av. H. Ravéra, BP 107</s1><s2>92225 Bagneux</s2><s3>FRA</s3><sZ>6 aut.</sZ></fA14><fA18 i1="01" i2="1"><s1>European Materials Research Society</s1><s2>Strasbourg</s2><s3>FRA</s3><s9>patr.</s9></fA18><fA20><s1>257-261</s1></fA20><fA21><s1>2002</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>26032</s2><s5>354000101730200410</s5></fA43><fA44><s0>0000</s0><s1>© 2002 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>15 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>02-0559331</s0></fA47><fA60><s1>P</s1><s2>C</s2></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Computational materials science</s0></fA64><fA66 i1="01"><s0>NLD</s0></fA66><fC01 i1="01" l="ENG"><s0>Phosphorus and beryllium have been coimplanted in InGaAs. Various anneals have been performed in the temperature range of 745-826°C. The secondary ion mass spectrometry measurements have revealed anomalous redistribution of the beryllium dopant: "up-hill" Be diffusion profiles have been observed. The observations of as-implanted profiles suggest that these anomalous beryllium peaks are due to beryllium trapping by the extended defects generated by the P implantation. A good agreement has been obtained between the experimental data and simulated profiles.</s0></fC01><fC02 i1="01" i2="3"><s0>001B60H55L</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Etude expérimentale</s0><s5>01</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Experimental study</s0><s5>01</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Semiconducteur III-V</s0><s5>02</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>III-V semiconductors</s0><s5>02</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Indium arséniure</s0><s2>NK</s2><s5>03</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Indium arsenides</s0><s2>NK</s2><s5>03</s5></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Gallium arséniure</s0><s2>NK</s2><s5>04</s5></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Gallium arsenides</s0><s2>NK</s2><s5>04</s5></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Couche mince</s0><s5>05</s5></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Thin films</s0><s5>05</s5></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Couche épitaxique</s0><s5>06</s5></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Epitaxial layers</s0><s5>06</s5></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Implantation ion</s0><s5>07</s5></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Ion implantation</s0><s5>07</s5></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Phosphore ion</s0><s2>NC</s2><s5>08</s5></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Phosphorus ions</s0><s2>NC</s2><s5>08</s5></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Dopage cristal</s0><s5>09</s5></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Crystal doping</s0><s5>09</s5></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Addition béryllium</s0><s5>10</s5></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Beryllium additions</s0><s5>10</s5></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Recuit thermique rapide</s0><s5>11</s5></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Rapid thermal annealing</s0><s5>11</s5></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Profil dopage</s0><s5>12</s5></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Doping profiles</s0><s5>12</s5></fC03><fC03 i1="13" i2="3" l="FRE"><s0>SIMS</s0><s5>13</s5></fC03><fC03 i1="13" i2="3" l="ENG"><s0>SIMS</s0><s5>13</s5></fC03><fC03 i1="14" i2="3" l="FRE"><s0>Diffusion(transport)</s0><s5>14</s5></fC03><fC03 i1="14" i2="3" l="ENG"><s0>Diffusion</s0><s5>14</s5></fC03><fC03 i1="15" i2="X" l="FRE"><s0>Hétérodiffusion</s0><s5>15</s5></fC03><fC03 i1="15" i2="X" l="ENG"><s0>Impurity diffusion</s0><s5>15</s5></fC03><fC03 i1="15" i2="X" l="SPA"><s0>Heterodifusión</s0><s5>15</s5></fC03><fC03 i1="16" i2="X" l="FRE"><s0>Interaction défaut cristallin</s0><s5>16</s5></fC03><fC03 i1="16" i2="X" l="ENG"><s0>Crystal defect interaction</s0><s5>16</s5></fC03><fC03 i1="16" i2="X" l="SPA"><s0>Interacción defecto cristalino</s0><s5>16</s5></fC03><fC03 i1="17" i2="3" l="FRE"><s0>Simulation ordinateur</s0><s5>17</s5></fC03><fC03 i1="17" i2="3" l="ENG"><s0>Computerized simulation</s0><s5>17</s5></fC03><fC03 i1="18" i2="3" l="FRE"><s0>6855L</s0><s2>PAC</s2><s4>INC</s4><s5>56</s5></fC03><fC03 i1="19" i2="3" l="FRE"><s0>InGaAs:Be P</s0><s4>INC</s4><s5>92</s5></fC03><fC03 i1="20" i2="3" l="FRE"><s0>As Ga In</s0><s4>INC</s4><s5>93</s5></fC03><fC07 i1="01" i2="3" l="FRE"><s0>Composé minéral</s0><s5>81</s5></fC07><fC07 i1="01" i2="3" l="ENG"><s0>Inorganic compounds</s0><s5>81</s5></fC07><fN21><s1>329</s1></fN21><fN82><s1>PSI</s1></fN82></pA><pR><fA30 i1="01" i2="1" l="ENG"><s1>E-MRS 2001 Spring Meeting - Symposium A</s1><s3>Strasbourg FRA</s3><s4>2001-06-05</s4></fA30></pR></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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